XPS study of ion-implanted arsenic in a-Si(H)
- 1 December 1984
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 11 (4) , 311-318
- https://doi.org/10.1016/0165-1633(84)90049-2
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- ESCA study of amorphous CVD Si3N4-C compositesJournal of Materials Science Letters, 1983
- Investigation of in-situ sputtered a-Si(H) by AESSolar Energy Materials, 1983
- Absorption of carbon from residual gases during Ti implantation of alloysApplied Physics Letters, 1983
- IR spectra of a-Si∶H implanted by Cl and As ionsCzechoslovak Journal of Physics, 1982
- Phosphorus concentration in hydrogenated amorphous silicon using ion-implanted referencesJournal of Vacuum Science and Technology, 1980
- The determination of sulfur-ion-implantation profiles in GaAs using Auger electron spectroscopyJournal of Applied Physics, 1979
- Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eVJournal of Electron Spectroscopy and Related Phenomena, 1976
- General formalism for quantitative Auger analysisSurface Science, 1975
- Detectability limits for boron and phosphorus in silicon by Auger electron spectroscopy (AES)Surface Science, 1974
- In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emissionSurface Science, 1972