Gas-source MBE growth of Tl-based III–V semiconductors and their Raman scattering characterization
- 29 February 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (2-3) , 547-551
- https://doi.org/10.1016/s0022-0248(99)00617-x
Abstract
No abstract availableKeywords
Funding Information
- Marubun Research Promotion Foundation
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 10 references indexed in Scilit:
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