Surface skimming buried heterostructure laser with applications to optoelectronic integration
- 29 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (5) , 513-515
- https://doi.org/10.1063/1.105423
Abstract
We demonstrate the ability to fabricate low-threshold current buried heterostructure lasers with the critical active layers in close proximity to the surface of the laser crystal. These structures readily lend themselves to applications involving optical field interactions on the surface of the crystal. We further demonstrate the compatibility of these structures with lateral heterojunction bipolar transistor fabrication.Keywords
This publication has 7 references indexed in Scilit:
- Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistorApplied Physics Letters, 1990
- Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flowIEEE Transactions on Electron Devices, 1989
- Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disorderingApplied Physics Letters, 1988
- Impurity-induced layer-disordered buried heterostructure AlxGa1−xAs-GaAs quantum well edge-injection laser arrayApplied Physics Letters, 1987
- Low threshold planar buried heterostructure lasers fabricated by impurity-induced disorderingApplied Physics Letters, 1985
- Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusionApplied Physics Letters, 1984
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981