Chemical reactions induced by the room temperature interaction of hyperthermal atomic hydrogen with the native oxide layer on GaAs(001) surfaces studied by ion scattering spectroscopy and x-ray photoelectron spectroscopy
- 1 September 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 15 (5) , 2502-2507
- https://doi.org/10.1116/1.580761
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactantJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Study of the H2 remote plasma cleaning of InP substrate for epitaxial growthJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Direct Observation of Species Liberated from GaAs Native Oxides during Atomic Hydrogen CleaningJapanese Journal of Applied Physics, 1994
- Dry Hydrogen Plasma Cleaning for Local Epitaxial GrowthMRS Proceedings, 1993
- Interaction of atomic hydrogen with native oxides on GaAs(100)Journal of Vacuum Science & Technology A, 1992
- Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen IrradiationJapanese Journal of Applied Physics, 1992
- GaAs-oxide removal using an electron cyclotron resonance hydrogen plasmaApplied Physics Letters, 1991
- Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen IrradiationJapanese Journal of Applied Physics, 1991
- Low-Temperature Surface Cleaning of GaAs by Electron Cyclotron Resonance (ECR) PlasmaJapanese Journal of Applied Physics, 1989
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam IrradiationJapanese Journal of Applied Physics, 1987