Dry Hydrogen Plasma Cleaning for Local Epitaxial Growth
- 24 October 1993
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 315 (1) , 91-96
- https://doi.org/10.1557/proc-315-91
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma sourceThin Solid Films, 1992
- Hydrogen in Crystalline SemiconductorsPublished by Springer Nature ,1992
- Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device qualityApplied Physics Letters, 1991
- High Definition Mesa Growth by Silicon MBEMRS Proceedings, 1991
- Low Temperature In-Situ Processing for Si-MBEMRS Proceedings, 1991
- Ion currents and energies in reactive low-voltage ion plating: preliminary resultsPublished by SPIE-Intl Soc Optical Eng ,1990
- Si Surface Cleaning and Epitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma‐Excited Molecular‐Beam‐Epitaxy at Low TemperaturesJournal of the Electrochemical Society, 1989
- New low-temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasmaApplied Physics Letters, 1988
- Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge filmsJournal of Applied Physics, 1986
- Hydrogen plasma etching of semiconductors and their oxidesJournal of Vacuum Science and Technology, 1982