Electronic structure of ultrathin Ge layers buried in Si(100)
- 24 August 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (11) , 115306
- https://doi.org/10.1103/physrevb.64.115306
Abstract
Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular Si bulk states, splitted and resonating in the Ge layers, were identified.Keywords
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