Selective Annealing Utilizing Single Pulse Excimer Laser Irradiation for Short Channel Metal-Oxide-Semiconductor Field-Effect Transistors

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Abstract
Excimer laser annealing (ELA) for metal-oxide-semiconductor (MOS) devices of less than a quarter micron was investigated. A new structure for the electrodes and new processing were developed to prevent deformation of the finely patterned electrodes during ELA. For a wavelength of 308 nm of the excimer laser, SiO2 films of 100 nm were deposited on the electrodes to reflect the laser light effectively. Fine metal-oxide-semiconductor field-effect transistors (MOSFETs) with shallow junction depth of 50 nm and fine patterned gate of 0.3 µm were realized and their characteristics were evaluated.