Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4S)
- https://doi.org/10.1143/jjap.39.2428
Abstract
We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3×1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.Keywords
This publication has 11 references indexed in Scilit:
- Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlatticesApplied Physics Letters, 1999
- Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructuresApplied Physics Letters, 1999
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1994
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993