Autodoping of Epitaxial Silicon Layers (III). Theoretical Treatment of Lateral Autodoping
- 1 December 1986
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 21 (12) , 1495-1502
- https://doi.org/10.1002/crat.2170211202
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD siliconCrystal Research and Technology, 1985
- Autodoping of epitaxial silicon layers (II) diffusion-induced autodopingCrystal Research and Technology, 1985
- A trapping mechanism for autodoping in silicon epitaxy—I. TheoryIEEE Transactions on Electron Devices, 1985
- A trapping mechanism for autodoping in silicon epitaxy—II. Parameter extraction and simulationsIEEE Transactions on Electron Devices, 1985
- Autodoping of antimony and arsenic in silicon epitaxial layersThin Solid Films, 1983
- Total pressure dependence of doping element incorporation during the chemical vapour deposition of epitaxial siliconCrystal Research and Technology, 1982
- Computer Simulation in Silicon EpitaxyJournal of the Electrochemical Society, 1981
- Kinetics of Lateral Autodoping in Silicon EpitaxyJournal of the Electrochemical Society, 1978
- Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solutionJournal of Physics and Chemistry of Solids, 1958