Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
- 1 September 2003
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 37 (9) , 1119-1122
- https://doi.org/10.1134/1.1610131
Abstract
A new method for the epitaxial formation of 1.3-µm injection lasers on GaAs substrates is reported. A metamorphic heterostructure with an In content of about 20% is deposited onto an intermediate...Keywords
This publication has 9 references indexed in Scilit:
- Low-threshold-current-density 1300-nm dilute-nitride quantum well lasersApplied Physics Letters, 2002
- InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiencyElectronics Letters, 2002
- Growth of high quality InGaAsN heterostructures and their laser applicationJournal of Crystal Growth, 2001
- High-quality metamorphic HEMT grown on GaAs substrates by MBEJournal of Crystal Growth, 2001
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structuresIEEE Journal of Quantum Electronics, 2000
- 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsSolid-State Electronics, 2000
- Low-threshold oxide-confined 1.3-μm quantum-dot laserIEEE Photonics Technology Letters, 2000
- InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsJournal of Crystal Growth, 1999
- Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applicationsApplied Physics Letters, 1998