Transfer of Hydrogen Atoms and Site Exchange between Ge and Si Atoms during Germane Adsorption at Si (001)
- 1 January 2005
- journal article
- Published by The Vacuum Society of Japan in SHINKU
- Vol. 48 (1) , 23-27
- https://doi.org/10.3131/jvsj.48.23
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The revolution in SiGe: impact on device electronicsApplied Surface Science, 2004
- Thermal desorption of gasesPublished by Elsevier ,2002
- Influence of molecular hydrogen on Ge island nucleation on Si(001)Journal of Applied Physics, 2000
- Thermodynamically driven Ge/Si place exchange induced by hydrogen on Ge-covered Si(001) surfacesPhysical Review B, 2000
- In situ monitoring of hydrogen-surfactant effect during Ge growth on Si(001) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
- Control of surface composition on Ge/Si(001) by atomic hydrogen irradiationSurface Science, 1999
- Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001)Physical Review Letters, 1998
- Hydrogen Effects on Si1-xGex/Si Heteroepitaxial Growth by Si2H6- and GeH4-Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces: Hydrogen on Si(100) and Ge(100)Surface Science, 1986