Co-Implantation of Si And Be in GaAs by Rapid Thermal Annealing
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Improved GaAs power FET Performance using Be Co-implantationIEEE Electron Device Letters, 1987
- Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channelsIEEE Transactions on Electron Devices, 1986
- Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate lengthIEEE Transactions on Electron Devices, 1985
- Multi-Step Rapid Thermal Annealing of Si-Implanted Gaas for Microwave Discrete Devices and Monolithic Integrated Circuits FabricationMRS Proceedings, 1985
- Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAsMRS Proceedings, 1985
- Below 10 ps/gate operation with buried p -layer SAINT FETsElectronics Letters, 1984
- GaAs MESFETs with a buried p -layer for large-scale integrationElectronics Letters, 1984