Implantation and damage under low-energy Si self-bombardment

Using molecular-dynamics simulations, we study the implantation of 50- and 100-eV Si atoms into (100) $2\times 1,$ (110), and (111) Si monocrystals and the induced damage. The dependence of the ion range and the damage distribution on the target crystal surface is discussed. The size of the near-surface disordered zones created by the ion impact is studied, and compared to experimental data for the critical fluence of Si amorphization. The fate of such a disordered zone under thermal annealing is studied for a representative case. Target atom relocation and adatom formation are investigated.