Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source
- 24 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (8) , 956-958
- https://doi.org/10.1063/1.106473
Abstract
Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β‐FeSi2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed ‘‘infrared quenching.’’Keywords
This publication has 7 references indexed in Scilit:
- Optical and electrical characterization of β-FeSi2 epitaxial thin films on silicon substratesJournal of Applied Physics, 1991
- Electronic properties of semiconducting FeSi2 filmsJournal of Applied Physics, 1990
- Growth mechanism and morphology of semiconducting FeSi2 filmsJournal of Applied Physics, 1990
- Epitaxial films of semiconducting FeSi2 on (001) siliconApplied Physics Letters, 1990
- Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxyApplied Physics Letters, 1989
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985