Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

This publication has 14 references indexed in Scilit:

• Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1990
• Carbon diffusion in undoped, n-type, and p-type GaAs
  Applied Physics Letters, 1989
• Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
  Applied Physics Letters, 1989
• Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
  Applied Physics Letters, 1988
• Metal-organic vapor phase epitaxy of compound semiconductors
  Materials Science Reports, 1987
• Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
  Applied Physics Letters, 1987
• The role of CH4 in metal organic chemical vapour deposition of GaAs
  Thin Solid Films, 1986
• Zinc Doping of MOCVD GaAs
  Journal of Crystal Growth, 1984
• A new technique for gettering oxygen and moisture from gases used in semiconductor processing
  Applied Physics Letters, 1982
• Dissociation energies of metal-carbon bonds and the excitation energies of metal atoms in combination
  Pure and Applied Chemistry, 1961