Effect of thermal etching on silicon epitaxial growth by vacuum sublimation
- 31 October 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (10) , 901-904
- https://doi.org/10.1016/0038-1101(75)90018-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Control of impurity density in homoepitaxial semiconductor layers grown by sublimation at UHVSolid-State Electronics, 1973
- Some aspects of the surface behaviour of siliconSurface Science, 1973
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971
- Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) filmsSurface Science, 1971
- Concentration and Behavior of Carbon in Semiconductor SiliconJournal of the Electrochemical Society, 1970
- Low-temperature epitaxial growth of doped silicon films and junctionsSolid-State Electronics, 1969
- Carbon contamination of Si (111) surfacesSurface Science, 1969
- The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon filmsSurface Science, 1969
- A review of the growth and structure of thin films of germanium and siliconMicroelectronics Reliability, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964