Semi-insulating cobalt doped indium phosphide grown by MOCVD
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 576-582
- https://doi.org/10.1016/0022-0248(88)90586-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-speed and high-power 1.3-μm InGaAsP buried crescent injection lasers with semi-insulating current blocking layersApplied Physics Letters, 1987
- Low-threshold and wide-bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi-insulating current confinement layersApplied Physics Letters, 1987
- Semi-insulating InP grown by low pressure MOCVDJournal of Electronic Materials, 1987
- BH InGaAsP Lasers with an LPE Grown Semi-Insulating LayerJapanese Journal of Applied Physics, 1986
- Electrical characterization of Fe-doped semi-insulating InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- Electrical properties of cobalt-doped InPJournal of Physics C: Solid State Physics, 1983
- High-resistivity (>105 Ω cm) InP layers by liquid phase epitaxyApplied Physics Letters, 1983
- A study on the purity and SIMS profiling of MOVPE–cadmium mercury tellurideJournal of Vacuum Science & Technology A, 1983
- The single crystal growth and electrical properties of cobalt-doped indium phosphideJournal of Crystal Growth, 1981
- Vapor growth of InP for MESFET’SJournal of Electronic Materials, 1980