A review of the techniques used for modeling single-event effects in power MOSFETs
- 1 April 1996
- journal article
- review article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (2) , 546-560
- https://doi.org/10.1109/23.490900
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Single event gate rupture in commercial power MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependenceIEEE Transactions on Nuclear Science, 1995
- Evaluation of SEGR threshold in power MOSFETsIEEE Transactions on Nuclear Science, 1994
- Temperature and angular dependence of substrate response in SEGR [power MOSFET]IEEE Transactions on Nuclear Science, 1994
- A conceptual model of a single-event gate-rupture in power MOSFETsIEEE Transactions on Nuclear Science, 1993
- Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETsIEEE Transactions on Nuclear Science, 1993
- Numerical analysis of single event burnout of power MOSFETsIEEE Transactions on Nuclear Science, 1993
- First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross SectionsIEEE Transactions on Nuclear Science, 1987
- On Heavy Ion Induced Hard-Errors in Dielectric StructuresIEEE Transactions on Nuclear Science, 1987
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978