Analysis of SiH vibrational absorption in amorphous SiOx:H (0≤x≤2.0) alloys in terms of a charge-transfer model

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Abstract
Amorphous SiOx:H films were deposited at 300 °C by rf glow discharge of SiH4‐O2 mixtures, and the SiH stretching vibrational absorption was investigated as a function of the oxygen content x. The absorption profiles were examined on the basis of the random‐bonding model (RBM). The length dSiH of SiH bonds in four H‐Si (Si3−nOn) bonding units was examined in terms of a charge‐transfer model, using the Sanderson’s electronegativity. Using these dSiH values, the peak wave numbers for the four components were found to be 2000, 2108, 2195, and 2260 cm−1, in agreement with the experimental ones determined on the basis of the RBM.