Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications
- 1 March 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 427 (1-2) , 142-146
- https://doi.org/10.1016/s0040-6090(02)01163-x
Abstract
No abstract availableKeywords
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