Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator
- 1 January 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 103 (1-3) , 107-117
- https://doi.org/10.1016/0040-6090(83)90429-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Inversion-mode InP MISFET employing phosphorus-nitride gate insulatorElectronics Letters, 1982
- Anodic oxide film as gate insulator for InP MOSFETsElectronics Letters, 1982
- The effects of annealing metal-insulator-semiconductor diodes employing a thermal nitride-InP interfaceJournal of Applied Physics, 1982
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching TechniqueJapanese Journal of Applied Physics, 1980
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFETJapanese Journal of Applied Physics, 1980
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFETJapanese Journal of Applied Physics, 1980
- Dynamic properties of interface-state bands in GaAs anodic MOS systemJournal of Vacuum Science and Technology, 1979
- Raman scattering from anodic oxide-GaAs interfacesApplied Physics Letters, 1979
- n -channel inversion-mode InP m.i.s.f.e.t.Electronics Letters, 1978
- Anodic Oxidation of GaAs in Mixed Solutions of Glycol and WaterJournal of the Electrochemical Society, 1976