CO2 Laser CVD of Disilane
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A) , L473
- https://doi.org/10.1143/jjap.23.l473
Abstract
Amorphous silicon films were deposited by a CO2 laser CVD (chemical vapor deposition) method using disilane gas. With this gas, the films were deposited reasonably fast at relatively low substrate temperatures of 350°C or above. Unlike monosilane, photo-induced effects in the gas phase following light absorption were negligible in deposition processes, and only the pyrolytic process taking place at the laser-heated substrate was important. Some of the physical properties of deposited films were described.Keywords
This publication has 12 references indexed in Scilit:
- Coherent Anti-Stokes Raman Spectroscopic Study of CO2 Laser CVD of SilaneJapanese Journal of Applied Physics, 1983
- Laser-induced deposition of silicon filmsThin Solid Films, 1983
- Glow-Discharge Deposition of a-Si: H from Pure Si2H6 and Pure SiH4Japanese Journal of Applied Physics, 1983
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- Electronic and optical properties of amorphous Si:H films deposited by chemical vapor depositionApplied Physics Letters, 1982
- Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silaneJournal of Applied Physics, 1982
- Preparation of amorphous silicon films by chemical vapor deposition from higher silanes SinH2n+2(n≳1)Applied Physics Letters, 1981
- Laser-induced chemical vapor deposition of polycrystalline Si from SiCl4Applied Physics Letters, 1980
- Chemical vapor deposition of silicon using a CO2 laserApplied Physics Letters, 1978
- The Infrared Spectrum of DisilaneThe Journal of Chemical Physics, 1954