Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide
- 1 January 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 103 (1-3) , 71-76
- https://doi.org/10.1016/0040-6090(83)90426-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Temperature dependence of MOS transistor characteristics below saturationIEEE Transactions on Electron Devices, 1966