SEU-hardened storage cell validation using a pulsed laser
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2843-2848
- https://doi.org/10.1109/23.556875
Abstract
Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed unexpected latch-up and single-event upset phenomena. The investigations that identified their location show the existence of a topology-dependent dual node upset mechanism. Design solutions are suggested to avoid its occurrenceKeywords
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