Temperature distributions induced by multibeam laser irradiation
- 15 October 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (8) , 3714-3717
- https://doi.org/10.1063/1.352319
Abstract
A general model is derived for computing the temperature profile induced by multibeam laser irradiation in a semi‐infinite substrate. The model is then applied to calculate a two‐beam irradiation‐induced temperature rise in different substrate materials such as Si, GaAs, and Mn‐Zn ferrites for investigating the dependence of depth, beam radius, and substrate thermal properties.This publication has 13 references indexed in Scilit:
- Heat flow in substrates induced by a scanning laser beamJournal of Applied Physics, 1992
- Laser-induced deposition of Ni lines on ferrite in NiSO4 aqueous solutionApplied Physics A, 1991
- Etching Rate Control by MeV O+ Implantation for Laser-Chemical Reaction of FerriteJapanese Journal of Applied Physics, 1990
- Laser-Induced Etching of Mn-Zn Ferrite an Its ApplicationJapanese Journal of Applied Physics, 1989
- Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4Applied Physics A, 1988
- Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphereApplied Physics A, 1988
- Laser-induced thermochemical maskless-etching of III?V compound semiconductors in chloride gas atmosphereApplied Physics A, 1988
- Temperature profiles induced by a scanning cw laser beamJournal of Applied Physics, 1982
- Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beamJournal of Applied Physics, 1980
- Temperature rise induced by a laser beam II. The nonlinear caseApplied Physics Letters, 1978