Ion implantation of zirconium and hafnium in InP and GaAs
- 1 June 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 683-686
- https://doi.org/10.1016/0168-583x(93)96209-u
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A simple technique for simultaneous fabrication of p +/n diodes and ohmic contacts on n-type InPJournal of Applied Physics, 1992
- Redistribution of Fe and Ti implanted into InPJournal of Applied Physics, 1991
- Damage-induced uphill diffusion of implanted Mg and Be in GaAsApplied Physics Letters, 1990
- Diffusion of implanted beryllium in gallium arsenide as a function of anneal temperature and doseApplied Physics Letters, 1989
- Properties of InP doped with 4d ionsSemiconductor Science and Technology, 1987
- Nonlinear strain effects in ion-implanted GaAsJournal of Applied Physics, 1987
- Strain in GaAs by low-dose ion implantationJournal of Applied Physics, 1987
- Stoichiometric disturbances in ion implanted compound semiconductorsJournal of Applied Physics, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- High-resistivity layers in n-InP produced by Fe ion implantationSolid-State Electronics, 1978