Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors
- 1 May 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (5) , 235-238
- https://doi.org/10.1109/55.491840
Abstract
Frequency multipliers (doubler and tripler) are demonstrated at room temperature, using a simple circuit that combines a load resistor with an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates an InGaAs/AlAs/InAs pseudomorphic resonant tunneling diode into the source of a nonalloyed ohmic contact InAlAs/InGaAs high electron mobility transistor. A nearly flat valley current is obtained in the RTHEMT's current-voltage characteristics, which results in pronounced negative transconductance throughout a wide range of drain-to-source bias voltages. As a result, frequency multipliers using RTHEMT's feature large output voltage swing and reduced power consumption.Keywords
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