Ion beam induced epitaxial crystallization of NiSi2
- 21 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (21) , 2117-2119
- https://doi.org/10.1063/1.102989
Abstract
Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼−196 °C with low‐energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13–58 °C by irradiating with high‐energy Si or Ne ions. Recrystallization proceeded in a layer‐by‐layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.Keywords
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