Two-dimensional electron gas at a Ga0.47In0.53As/ (AlxGa1−x)0.48In0.52As interface

8 August 1988

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 53 (6) , 479-481
https://doi.org/10.1063/1.99874

Abstract

We report the first observation of a two-dimensional electron gas in (AlGa) InAs/GaInAs heterostructures. Angular-dependent Shubnikov–de Haas oscillations and quantum Hall effect prove the two dimensionality of the system. We discuss the effect of the barrier composition on the electronic structure of the system. A significant number of electrons remain confined even for the smallest confinement barrier. Persistent photoconductivity was observed at low temperature.

Keywords

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