Stress-Assisted Diffusion of Boron and Arsenic in Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The diffusion of B and As in mechanically strnsed silicon has been investigated for initial implant doses of 1013, 1014, and 1015 cm-2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant enhancement or retardation was observed. This was true even in plastically deformed samples with dislocation densities >1×107 cm-2. The results are consistent with the multiple charge state vacancy model of impurity diffusion in silicon. The B diffusivity appears to agree with the accepted activation energy of 3.59 eV and pre-exponential of 3.17 cm2/sec for intrinsic B diffusion.Keywords
This publication has 18 references indexed in Scilit:
- Mechanical strength of silicon crystals as a function of the oxygen concentrationJournal of Applied Physics, 1984
- Stresses in silicon crystals from ion-implanted amorphous regionsApplied Physics A, 1983
- Simple stress formula for multilayered thin films on a thick substrateJournal of Applied Physics, 1982
- Stress distributions in silicon crystal substrates with thin filmsJournal of Applied Physics, 1981
- Implantation-induced strains in silicon studied by X-ray interferometry and topographyPhilosophical Magazine A, 1978
- X-Ray Measurement of Lattice Strain Induced by Impurity DiffusionJournal of the Physics Society Japan, 1975
- Intense Interjunction Strain in Phosphorus-Diffused SiliconJournal of the Electrochemical Society, 1968
- Diffusion-Induced Stress and Lattice Disorders in SiliconJournal of the Electrochemical Society, 1966
- Effect of Mechanical Stress on p-n Junction Device CharacteristicsJournal of Applied Physics, 1964
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961