X-Ray Measurement of Lattice Strain Induced by Impurity Diffusion
- 15 January 1975
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 38 (1) , 202-207
- https://doi.org/10.1143/jpsj.38.202
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Anomalous Diffusion of Phosphorus into SiliconJapanese Journal of Applied Physics, 1970
- Strain Compensation in Silicon by Diffused ImpuritiesJournal of the Electrochemical Society, 1969
- Intense Interjunction Strain in Phosphorus-Diffused SiliconJournal of the Electrochemical Society, 1968
- Residual Strains in Phosphorus-Diffused SiliconJournal of Applied Physics, 1967
- X-ray measurement of elastic strain and lattice constant of diffused siliconSolid-State Electronics, 1967
- Strain in Thin Metal Films on QuartzJournal of Applied Physics, 1966
- Diffusion-Induced Stress and Lattice Disorders in SiliconJournal of the Electrochemical Society, 1966
- Boron Induced Dislocations in SiliconJournal of Applied Physics, 1962
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Die Konstitution der Mischkristalle und die Raumf llung der AtomeThe European Physical Journal A, 1921