Distribution profiles of boron-implanted layers in silicon using a high resolution anodic oxidation cell

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Abstract
Construction and performance details of an anodic oxidation cell for accurately controlled removal of thin layers of silicon are given. The cell was utilized in determining the concentration and mobility profiles of boron-implanted layers in silicon with the samples held at liquid nitrogen (− 170°C) temperature over a range of implant energies from 60 to 100 keV. It is observed that at a post-implant annealing temperature of 850°C, there is a rapid broadening of the profile due to enhanced diffusion corresponding to an increase in the diffusion coefficient of an order of magnitude above that of the substitution diffusion mechanism.