Ultrafast photoconductors from low-temperature MOCVD-grown GaAs and InGaAs epitaxial layers
- 1 February 1994
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 58 (2) , 177-181
- https://doi.org/10.1007/bf00332175
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour depositionSemiconductor Science and Technology, 1992
- Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperaturesIEEE Journal of Quantum Electronics, 1992
- Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1991
- Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1991
- Breakdown of crystallinity in low-temperature-grown GaAs layersApplied Physics Letters, 1991
- Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBEIEEE Electron Device Letters, 1990
- Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InPApplied Physics Letters, 1990
- Photoluminescence study of acceptors in silicon-doped gallium arsenide grown by metalorganic chemical vapor depositionJournal of Crystal Growth, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969