Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs
- 9 October 2006
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (15) , 153109
- https://doi.org/10.1063/1.2358847
Abstract
The molecular beam epitaxial growth and characteristics of metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths and high intensity at room temperature. The lasers are characterized by ultralow threshold current , large frequency response , and near-zero parameter and chirp.
Keywords
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