Reliability study on InAlAs/InGaAs HEMTs with an InP recess-etch stopper and refractory gate metal
- 31 October 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (10) , 1651-1656
- https://doi.org/10.1016/s0038-1101(97)00119-6
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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