Replacement of magnesium in InGaAs/InP heterostructures during zinc diffusion
- 28 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9) , 876-878
- https://doi.org/10.1063/1.101627
Abstract
Zn diffusions from spin-on films have been carried out into n-InP/p+-InGaAs/n-InP heterostructures, which were grown by metalorganic vapor phase epitaxy for heterojunction bipolar transistors with Mg as a p dopant. After diffusion, Mg was completely substituted by Zn and enriched in the spin-on film. In the presence of Mg, the indiffusion of Zn is strongly enhanced. By varying doping levels and diffusion conditions, the underlying mechanism is studied and compared to recent experiments with Be-doped AlGaAs/GaAs heterostructures.Keywords
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