A method for the determination of the material parameters τ, D, L0, S and a from measured A.C. short-circuit photocurrent
- 31 October 1988
- journal article
- Published by Elsevier in Solar Cells
- Vol. 25 (1) , 61-72
- https://doi.org/10.1016/0379-6787(88)90058-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A theory for the simultaneous determination of the minority carrier lifetime, diffusion length and diffusion constant in a semiconducting medium using a modulated light beamSolar Cells, 1987
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current MethodJapanese Journal of Applied Physics, 1983
- Measurement of minority carrier lifetime in GaAs and GaAs1−xPx with an intensity-modulated electron beamSolid-State Electronics, 1982
- Determination of lifetime and diffusion constant of minority carriers by a phase-shift technique using an electron-beam-induced currentJournal of Applied Physics, 1981
- Recombination lifetimes and surface recombination velocities of minority carriers in n-p junctions. A new method for their determination by means of a stationary amplitude-modulated electron beamJournal of Applied Physics, 1979
- A method to determine minority carrier lifetime in GaAs light-emitting diodesSolid-State Electronics, 1979
- Theory of diffusion constant-, lifetime- and surface recombination velocity-measurements with the scanning electron microscopeSolid-State Electronics, 1978
- Measurement of minority carrier lifetime profiles in siliconSolid-State Electronics, 1977
- Lifetime measurements in silicon epitaxial materialsSolid-State Electronics, 1975
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952