Trap-limited migration of vacancy-type defects in 7.5 keV H−-implanted Si
- 4 March 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (9) , 1577-1579
- https://doi.org/10.1063/1.1456952
Abstract
We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance–voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding ∼1 μm beyond the top ∼0.25 μm region of samples where they were generated. We describe a close relationship between generation of the VO–H complex and the VP pair on the free carrier compensation.Keywords
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