Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources
- 1 December 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (12) , 1263-1265
- https://doi.org/10.1016/0038-1101(80)90122-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Boron Diffusion in Silicon‐Concentration and Orientation Dependence, Background Effects, and Profile EstimationJournal of the Electrochemical Society, 1975
- Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into SiliconJournal of the Electrochemical Society, 1973
- Glass Source Diffusion in Si and SiO[sub 2]Journal of the Electrochemical Society, 1971
- Concentration-Dependent Diffusion of Boron and Phosphorus in SiliconJournal of Applied Physics, 1970
- Anomalous diffusion in semiconductorsȁa quantitative analysisSolid-State Electronics, 1970
- Solid Solubility and Diffusion Coefficients of Boron in SiliconJournal of the Electrochemical Society, 1969
- Studies of anomalous diffusion of impurities in siliconSolid-State Electronics, 1966
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954