SP: an advanced surface-potential-based compact MOSFET model
- 30 August 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 39 (9) , 1394-1406
- https://doi.org/10.1109/jssc.2004.831604
Abstract
This work describes an advanced physics-based compact MOSFET model (SP). Both the quasistatic and nonquasi-static versions of SP are surface-potential-based. The model is symmetric, includes the accumulation region, small-geometry effects, and has a consistent current and charge formulation. The surface potential is computed analytically and there are no iterative loops anywhere in the model. Availability of the surface potential in the source-drain overlap regions enables a physics-based formulation of the extrinsic model (e.g., gate tunneling current) and allows for a noise model free of discontinuities or unphysical interpolation schemes. Simulation results are used to illustrate the interplay between the model structure and circuit design.Keywords
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