The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

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Abstract
Structures with In(Ga)As quantum dots in the GaAs matrix obtained using molecular-beam epitaxy are investigated using photoluminescence (PL) measurements and transmission electron microscopy. The structures were subjected in situ to the procedure of the selective thermal elimination of defect regions. Based on the results of the analysis of luminescence properties, a method for evaluating the crystalline quality of structures using the measurements of PL intensity for the GaAs matrix at high temperatures (as high as 400 K) is suggested. Procedures for the elimination of defects are investigated, namely, the single-stage selective elimination of InAs defect islands at 600°C and a two-stage procedure. The latter procedure additionally includes selective overgrowth with a thin AlAs layer and high-temperature (650–700°C) heat treatment. The optimal conditions of the process, which permit the obtaining of structures with a relatively low defect density without a considerable decrease in the density of coherent quantum dots, are found.