Unambiguous determination of crystal-lattice strains in epitaxially grown SiGe/Si multilayers
- 15 December 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (12) , 6683-6688
- https://doi.org/10.1063/1.363793
Abstract
A new method for unambiguous reconstruction of crystal-lattice strains in epitaxially grown layers from high-resolution x-ray diffraction data is proposed. The technique uses x-ray diffracted intensity profiles collected for two different radiation wavelengths. We enhance the theory for the previously developed algorithm for model-independent determination of crystal-lattice strain profiles in single crystals with epitaxially grown top-surface layers. The method relies on the retrieval of the scattered x-ray wave phase from its intensity profile via a logarithmic Hilbert transform. This phase-retrieval technique is always associated with the problem of complex polynomial root finding. A practical procedure for the mapping of complex polynomial roots is proposed to distinguish true and virtual zeros. This allows the phase of the diffracted x-ray wave to be retrieved unambiguously. The method was applied to determine physical dimensions and concentration composition of a Si/Si1−xGex/Si alloy multilayer structure typical for SiGe heterobipolar transistor device.This publication has 11 references indexed in Scilit:
- New Phase-Sensitive Method of Single-Crystal Characterization under X-Ray Diffraction ConditionsPhysical Review Letters, 1996
- Model-independent determination of the strain distribution for a/Si superlattice using x-ray diffractometry dataPhysical Review B, 1996
- High-Resolution Mapping of Two-Dimensional Lattice Distortions in Ion-Implanted Crystals from X-ray Diffractometry DataJournal of Applied Crystallography, 1995
- Backscattering analysis of Si1−yCy layers using the 12C(4He,4He) 12C resonance at 4.265 MeVNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Mapping of two-dimensional lattice distortions in silicon crystals at submicrometer resolution from X-ray rocking-curve dataJournal of Applied Crystallography, 1994
- Fitting of rocking curves from ion-implanted semiconductorsJournal of Applied Crystallography, 1994
- Analysis of (n,-n) and (n, -n, n) X-ray rocking curves of processed siliconJournal of Physics D: Applied Physics, 1993
- Fourier Reconstruction of Density Profiles of Thin Films Using Anomalous X-Ray ReflectivityEurophysics Letters, 1993
- Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curvesPhysica Status Solidi (a), 1987
- The Phase Reconstruction Problem for Wave Amplitudes and Coherence FunctionsPublished by Springer Nature ,1978