Transfer of GaSb thin film to insulating substrateviaseparation by hydrogen implantation
- 15 April 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (8) , 675-676
- https://doi.org/10.1049/el:19990477
Abstract
Thin films of GaSb were transferred to insulating substrates by a combination of wafer bonding and separation by hydrogen ion implantation. Hydrogen ion implantation and exfoliation were successfully exploited to transfer a 240 nm thick GaSb film to a glass substrate at temperatures ≤150°C. A novel room temperature wafer bonding technique utilising an ultraviolet/ozone process was also demonstrated. The films have been characterised by atomic force and scanning electron microscopies.Keywords
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