Fabrication of SOI substrates with ultra-thin Silayers
- 11 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (12) , 1265-1267
- https://doi.org/10.1049/el:19980829
Abstract
A simple technique for the fabrication of ultra-thin silicon-on-insulator (SOI) substrates is presented. The bond-and-etch-back technique utilising an SixGe1–x etch stop has been combined with the thin film separation by hydrogen implantation approach, and SOI substrates with ultra-thin (< 5 nm) Si layers have been successfully fabricated.Keywords
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