Dislocations and precipitates in gallium arsenide

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Abstract
A complete dislocation analysis on a large number of grown‐in dislocations was performed on wafers taken from three different semi‐insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decision could be made on dislocation type, dislocation generation, and multiplication mechanisms. Taking into account possible dislocation reactions between stress‐induced glide systems all detected glide systems could be explained. The influence of post‐growth annealing on both dislocations and arsenic precipitates was also investigated. Little effect was found on dislocations. Arsenic precipitates, however, showed a different distribution in size and significant effects on fine structure giving information on their nucleation and growth mechanisms.