Improvement of dark current of Ga(A1)Sb mesa diodes using (NH4)2S treatment
- 31 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 28 (1-3) , 374-378
- https://doi.org/10.1016/0921-5107(94)90086-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Passivation of GaSb by sulfur treatmentJournal of Electronic Materials, 1994
- GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Impact ionization in Ga1−xAlxSbApplied Physics Letters, 1992
- Electrical properties of GaSb Schottky diodes and p-n junctionsMaterials Science and Engineering: B, 1992
- Ionization coefficients in Ga0.96Al0.04SbJournal of Applied Physics, 1990
- Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSbJournal of Applied Physics, 1990
- A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanismJournal of Applied Physics, 1990
- Measurement of the impact ionization rates in Al0.06Ga0.94SbApplied Physics Letters, 1990
- Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructuresApplied Physics Letters, 1989
- Jonctions Ga0,96Al0,04Sb adaptées à la photodétection à 1,55 μm réalisées par épitaxie en phase liquideRevue de Physique Appliquée, 1987