P-rich Si particles in separation by implanted oxygen structures revealed by low-temperature electron-spin resonance

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Abstract
Low‐temperature X‐ and K‐band electron‐spin‐resonance measurements on separation by implanted oxygen structures formed by implanting oxygen to a dose ≊1.7×1018 cm−2 on [001] c‐Si wafers—both n and p type [dopant concentration ≊(9–28)x1014 cm−3 ]—reveal the presence of a signal due to submetallic Si:P effectively doped to [P]≊2.0×1018 cm−3 . The signal is identified as originating from the polyhedron‐shaped c‐Si precipitates known to remain in the buried SiO2 layer near the bulkside Si/SiO2 interface, even after high‐temperature annealing. The capstone in this identification stems from the faceted structure of these Si islands, which, combined with the concomitant misfit‐induced and plane‐index related strain, accounts for the anisotropic g and linewidth—not observed as such in bulk Si:P. This result indicates an impurity effect as contributing to the persistence of these Si microcrystallites upon annealing.