A highly reliable via filling technology using high-temperature Al-Sc alloy sputter deposition
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 281-284
- https://doi.org/10.1109/iedm.1993.347351
Abstract
A via filling technology using high-temperature Al-Si-Sc alloy sputter deposition has been studied and compared with Al-Si-Cu and W filled vias. It was found that the electromigration resistance of the Al-Si-Sc filled vias is a factor of 25-40 times greater than those of the Al-Si-Cu and W filled vias. The electromigration resistance of the W and Al-Si-Cu filled vias is almost the same.<>Keywords
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