Influence of Local Environment on Bound Excitons and Bound Excitonic Molecules in III-V Alloys. I. Theory and Numerical Results for GaAs1−xPx:N
- 1 November 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 132 (1) , 239-254
- https://doi.org/10.1002/pssb.2221320124
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:NPhysica Status Solidi (b), 1984
- Binding to a pair of marginal potentials : a test for the stability of N- in GaPJournal de Physique Lettres, 1983
- Disorder‐induced broadening for free direct excitons in II–VI and III–V semiconducting mixed crystalsPhysica Status Solidi (b), 1981
- Local-environment effect on the nitrogen bound state inalloys: Experiments and coherent-potential approximation theoryPhysical Review B, 1980
- Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic studyPhysical Review B, 1980
- Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAsJournal of Luminescence, 1979
- Nitrogen isoelectronic trap in : II. Model calculation of the electronic states and at low temperaturePhysical Review B, 1977
- Theory of isoelectronic trapsJournal of Luminescence, 1973
- Binding to Isoelectronic Impurities in SemiconductorsPhysical Review Letters, 1972
- Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaPPhysical Review B, 1969