Monte Carlo simulation of two-dimensional distributions of implanted ions in a crystalline silicon target
- 1 July 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 34 (1) , 22-26
- https://doi.org/10.1016/0168-583x(88)90358-8
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- On anomalous channelling effects in ion-implanted siliconPhilosophical Magazine Letters, 1987
- Channeling in GaAs. A Monte Carlo Simulation of low Energy ImplantsPhysica Status Solidi (a), 1986
- Precise ion-implantation analysis including channeling effectsIEEE Transactions on Electron Devices, 1986
- Ion damage calculations in crystalline siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Calculation of channeling effects during ion implantation using the Boltzmann transport equationIEEE Transactions on Electron Devices, 1985
- Channeling of ions near the silicon 〈001〉 axisApplied Physics Letters, 1985
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- Computer simulation of collision cascades in monazitePhysical Review B, 1983
- Computer studies of low energy scattering in crystalline and amorphous targetsNuclear Instruments and Methods, 1976
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974